FDS6162N7
For Reference Only
| Part Number | FDS6162N7 |
| PNEDA Part # | FDS6162N7 |
| Description | MOSFET N-CH 20V 23A 8-SOIC |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,642 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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FDS6162N7 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FDS6162N7 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FDS6162N7 Specifications
| Manufacturer | ON Semiconductor |
| Series | PowerTrench® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 23A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 73nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 5521pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 21mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 588pF @ 15V FET Feature - Power Dissipation (Max) 820mW (Ta), 8.33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
