Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDS8842NZ

FDS8842NZ

For Reference Only

Part Number FDS8842NZ
PNEDA Part # FDS8842NZ
Description MOSFET N-CH 40V 14.9A 8SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,906
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDS8842NZ Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDS8842NZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDS8842NZ, FDS8842NZ Datasheet (Total Pages: 8, Size: 409.82 KB)
PDFFDS8842NZ Datasheet Cover
FDS8842NZ Datasheet Page 2 FDS8842NZ Datasheet Page 3 FDS8842NZ Datasheet Page 4 FDS8842NZ Datasheet Page 5 FDS8842NZ Datasheet Page 6 FDS8842NZ Datasheet Page 7 FDS8842NZ Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDS8842NZ Datasheet
  • where to find FDS8842NZ
  • ON Semiconductor

  • ON Semiconductor FDS8842NZ
  • FDS8842NZ PDF Datasheet
  • FDS8842NZ Stock

  • FDS8842NZ Pinout
  • Datasheet FDS8842NZ
  • FDS8842NZ Supplier

  • ON Semiconductor Distributor
  • FDS8842NZ Price
  • FDS8842NZ Distributor

FDS8842NZ Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C14.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 14.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs73nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3845pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

STW23N85K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

850V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

275mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1650pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

SQJA37EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.2mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4900pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IPS70R2K0CEE8211

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRLHS6242TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

11.7mOhm @ 8.5A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1110pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.98W (Ta), 9.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-PQFN (2x2)

Package / Case

6-PowerVDFN

VP0104N3-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

250mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

8Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Recently Sold

LM393DT

LM393DT

Rohm Semiconductor

IC COMPARATOR DUAL 0.4MA 8-SOIC

MC14040BDR2G

MC14040BDR2G

ON Semiconductor

IC COUNTER 12BIT CMOS 16SOIC

PS2501L-4-A

PS2501L-4-A

CEL

OPTOISOLTR 5KV 4CH TRANS 16-SMD

PDTC143ZT,235

PDTC143ZT,235

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

V7-7B17D8-201

V7-7B17D8-201

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION SPDT 11A 125V

3314J-1-103E

3314J-1-103E

Bourns

TRIMMER 10K OHM 0.25W J LEAD TOP

W25Q80DVSVIG

W25Q80DVSVIG

Winbond Electronics

IC FLASH 8M SPI 104MHZ 8VSOP

HX1198FNL

HX1198FNL

Pulse Electronics Network

PULSE XFMR 1CT:1CT TX 1CT:1CT RX

FXLP34P5X

FXLP34P5X

ON Semiconductor

IC TRNSLTR UNIDIRECTIONAL SC70-5

B520C-13-F

B520C-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 5A SMC

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

SSC54-E3/57T

SSC54-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB