FJ4B01120L1
For Reference Only
| Part Number | FJ4B01120L1 |
| PNEDA Part # | FJ4B01120L1 |
| Description | CSP SINGLE P-CHANNEL MOSFET |
| Manufacturer | Panasonic Electronic Components |
| Unit Price | Request a Quote |
| In Stock | 14,874 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 11 - Jun 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FJ4B01120L1 Resources
| Brand | Panasonic Electronic Components |
| ECAD Module |
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| Mfr. Part Number | FJ4B01120L1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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FJ4B01120L1 Specifications
| Manufacturer | Panasonic Electronic Components |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 10.7nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 814pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370mW (Ta) |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Supplier Device Package | ULGA004-W-1010-RA01 |
| Package / Case | 4-XFLGA, CSP |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 936mOhm @ 3A, 15V Vgs(th) (Max) @ Id 7V @ 800µA Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 15V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 410pF @ 100V FET Feature - Power Dissipation (Max) 86W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 19A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V FET Feature - Power Dissipation (Max) 460W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
