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FQP32N20C

FQP32N20C

For Reference Only

Part Number FQP32N20C
PNEDA Part # FQP32N20C
Description MOSFET N-CH 200V 28A TO-220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 230,466
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 11 - Jun 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQP32N20C Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQP32N20C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQP32N20C, FQP32N20C Datasheet (Total Pages: 12, Size: 815.61 KB)
PDFFQP32N20C_F080 Datasheet Cover
FQP32N20C_F080 Datasheet Page 2 FQP32N20C_F080 Datasheet Page 3 FQP32N20C_F080 Datasheet Page 4 FQP32N20C_F080 Datasheet Page 5 FQP32N20C_F080 Datasheet Page 6 FQP32N20C_F080 Datasheet Page 7 FQP32N20C_F080 Datasheet Page 8 FQP32N20C_F080 Datasheet Page 9 FQP32N20C_F080 Datasheet Page 10 FQP32N20C_F080 Datasheet Page 11

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FQP32N20C Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs82mOhm @ 14A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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