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GP1M004A090H

GP1M004A090H

For Reference Only

Part Number GP1M004A090H
PNEDA Part # GP1M004A090H
Description MOSFET N-CH 900V 4A TO220
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP1M004A090H Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP1M004A090H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP1M004A090H, GP1M004A090H Datasheet (Total Pages: 7, Size: 415.42 KB)
PDFGP1M004A090H Datasheet Cover
GP1M004A090H Datasheet Page 2 GP1M004A090H Datasheet Page 3 GP1M004A090H Datasheet Page 4 GP1M004A090H Datasheet Page 5 GP1M004A090H Datasheet Page 6 GP1M004A090H Datasheet Page 7

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GP1M004A090H Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds955pF @ 25V
FET Feature-
Power Dissipation (Max)123W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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