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H11B1M

H11B1M

For Reference Only

Part Number H11B1M
PNEDA Part # H11B1M
Description OPTOISO 4.17KV DARL W/BASE 6DIP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,486
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

H11B1M Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberH11B1M
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
H11B1M, H11B1M Datasheet (Total Pages: 14, Size: 399.52 KB)
PDF4N29TVM Datasheet Cover
4N29TVM Datasheet Page 2 4N29TVM Datasheet Page 3 4N29TVM Datasheet Page 4 4N29TVM Datasheet Page 5 4N29TVM Datasheet Page 6 4N29TVM Datasheet Page 7 4N29TVM Datasheet Page 8 4N29TVM Datasheet Page 9 4N29TVM Datasheet Page 10 4N29TVM Datasheet Page 11

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H11B1M Specifications

ManufacturerON Semiconductor
Series-
Number of Channels1
Voltage - Isolation4170Vrms
Current Transfer Ratio (Min)500% @ 1mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)25µs, 18µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)30V
Current - Output / Channel150mA
Voltage - Forward (Vf) (Typ)1.2V
Current - DC Forward (If) (Max)80mA
Vce Saturation (Max)1V
Operating Temperature-40°C ~ 100°C
Mounting TypeThrough Hole
Package / Case6-DIP (0.300", 7.62mm)
Supplier Device Package6-DIP

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