HGTG20N60B3D
For Reference Only
| Part Number | HGTG20N60B3D |
| PNEDA Part # | HGTG20N60B3D |
| Description | IGBT 600V 40A 165W TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 18,816 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HGTG20N60B3D Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | HGTG20N60B3D |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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HGTG20N60B3D Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 40A |
| Current - Collector Pulsed (Icm) | 160A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Power - Max | 165W |
| Switching Energy | 475µJ (on), 1.05mJ (off) |
| Input Type | Standard |
| Gate Charge | 80nC |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | 55ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 25A Power - Max 192W Switching Energy 800µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C -/235ns Test Condition 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 14A Current - Collector Pulsed (Icm) 18A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 3A Power - Max 56W Switching Energy 46.5µJ (on), 23.5µJ (off) Input Type Standard Gate Charge 12nC Td (on/off) @ 25°C 6.7ns/46ns Test Condition 390V, 3A, 10Ohm, 15V Reverse Recovery Time (trr) 50ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A Power - Max 290W Switching Energy 1.13mJ (on), 310µJ (off) Input Type Standard Gate Charge 120nC Td (on/off) @ 25°C 25ns/115ns Test Condition 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package I2PAK (TO-262) |
