Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HTNFET-DC

HTNFET-DC

For Reference Only

Part Number HTNFET-DC
PNEDA Part # HTNFET-DC
Description MOSFET N-CH 55V 8-DIP
Manufacturer Honeywell Aerospace
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HTNFET-DC Resources

Brand Honeywell Aerospace
ECAD Module ECAD
Mfr. Part NumberHTNFET-DC
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HTNFET-DC Datasheet
  • where to find HTNFET-DC
  • Honeywell Aerospace

  • Honeywell Aerospace HTNFET-DC
  • HTNFET-DC PDF Datasheet
  • HTNFET-DC Stock

  • HTNFET-DC Pinout
  • Datasheet HTNFET-DC
  • HTNFET-DC Supplier

  • Honeywell Aerospace Distributor
  • HTNFET-DC Price
  • HTNFET-DC Distributor

HTNFET-DC Specifications

ManufacturerHoneywell Aerospace
SeriesHTMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs4.3nC @ 5V
Vgs (Max)10V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 28V
FET Feature-
Power Dissipation (Max)50W (Tj)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device Package-
Package / Case8-CDIP Exposed Pad

The Products You May Be Interested In

HUF75345G3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

275nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

325W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220ABFP

Package / Case

TO-220-3 Full Pack, Isolated Tab

MMBF170LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

60pF @ 10V

FET Feature

-

Power Dissipation (Max)

225mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SUP60N10-18P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

18.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STL45N60DM6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ DM6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (8x8) HV

Package / Case

8-PowerVDFN

Recently Sold

BH1726NUC-E2

BH1726NUC-E2

Rohm Semiconductor

SENSOR OPT AMBIENT WSON008X2120

TCA785

TCA785

Infineon Technologies

IC PHASE CONTROL 250MA OUT 16DIP

DTC114EM3T5G

DTC114EM3T5G

ON Semiconductor

TRANS PREBIAS NPN 260MW SOT723

7447789133

7447789133

Wurth Electronics

FIXED IND 33UH 1.22A 240 MOHM

SRP4020-2R2M

SRP4020-2R2M

Bourns

FIXED IND 2.2UH 3.9A 40 MOHM SMD

XC6VSX475T-1FF1759I

XC6VSX475T-1FF1759I

Xilinx

IC FPGA 840 I/O 1759FCBGA

FDS6675BZ

FDS6675BZ

ON Semiconductor

MOSFET P-CH 30V 8-SOIC

AD8226ARZ-R7

AD8226ARZ-R7

Analog Devices

IC INST AMP 1 CIRCUIT 8SOIC

HDT0001

HDT0001

C&K

SWITCH DETECTOR SPST-NO 1MA 5V

7447709680

7447709680

Wurth Electronics

FIXED IND 68UH 3.2A 89 MOHM SMD

LTST-C190TBKT

LTST-C190TBKT

Lite-On Inc.

LED BLUE CLEAR CHIP SMD

MAX3045BESE+

MAX3045BESE+

Maxim Integrated

IC DRIVER 4/0 16SO