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HUF75829D3S

HUF75829D3S

For Reference Only

Part Number HUF75829D3S
PNEDA Part # HUF75829D3S
Description MOSFET N-CH 150V 18A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,544
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HUF75829D3S Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHUF75829D3S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
HUF75829D3S, HUF75829D3S Datasheet (Total Pages: 10, Size: 191.86 KB)
PDFHUFA75829D3ST Datasheet Cover
HUFA75829D3ST Datasheet Page 2 HUFA75829D3ST Datasheet Page 3 HUFA75829D3ST Datasheet Page 4 HUFA75829D3ST Datasheet Page 5 HUFA75829D3ST Datasheet Page 6 HUFA75829D3ST Datasheet Page 7 HUFA75829D3ST Datasheet Page 8 HUFA75829D3ST Datasheet Page 9 HUFA75829D3ST Datasheet Page 10

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HUF75829D3S Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 20V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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