IAUT260N10S5N019ATMA1
For Reference Only
| Part Number | IAUT260N10S5N019ATMA1 |
| PNEDA Part # | IAUT260N10S5N019ATMA1 |
| Description | MOSFET_(75V,120V( |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 22,458 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 5 - Jun 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IAUT260N10S5N019ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IAUT260N10S5N019ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IAUT260N10S5N019ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™-5 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 210µA |
| Gate Charge (Qg) (Max) @ Vgs | 166nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11830pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-1 |
| Package / Case | 8-PowerSFN |
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Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 99mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 385pF @ 15V FET Feature - Power Dissipation (Max) 236mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-6 Package / Case SOT-563, SOT-666 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2653pF @ 15V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
