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IKD03N60RF

IKD03N60RF

For Reference Only

Part Number IKD03N60RF
PNEDA Part # IKD03N60RF
Description IGBT 600V 5A 53.6W TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,744
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKD03N60RF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKD03N60RF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKD03N60RF Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)5A
Current - Collector Pulsed (Icm)7.5A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 2.5A
Power - Max53.6W
Switching Energy90µJ
Input TypeStandard
Gate Charge17.1nC
Td (on/off) @ 25°C10ns/128ns
Test Condition400V, 2.5A, 68Ohm, 15V
Reverse Recovery Time (trr)31ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3

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Series

TrenchStop®

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

12ns/215ns

Test Condition

400V, 10A, 23Ohm, 15V

Reverse Recovery Time (trr)

115ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

Manufacturer

IXYS

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 15A

Power - Max

150W

Switching Energy

1.75mJ (off)

Input Type

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Gate Charge

57nC

Td (on/off) @ 25°C

30ns/148ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 AA (IXSA)

Manufacturer

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Series

GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 120A

Power - Max

540W

Switching Energy

230µJ (on), 730µJ (off)

Input Type

Standard

Gate Charge

230nC

Td (on/off) @ 25°C

28ns/109ns

Test Condition

200V, 60A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

2.4A

Current - Collector Pulsed (Icm)

10A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 1.2A

Power - Max

25W

Switching Energy

30µJ (on), 13µJ (off)

Input Type

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Gate Charge

9nC

Td (on/off) @ 25°C

15ns/80ns

Test Condition

300V, 1.2A, 200Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

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Microsemi

Manufacturer

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Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

93A

Current - Collector Pulsed (Icm)

195A

Vce(on) (Max) @ Vge, Ic

3.15V @ 15V, 50A

Power - Max

415W

Switching Energy

755µJ (off)

Input Type

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Gate Charge

235nC

Td (on/off) @ 25°C

16ns/225ns

Test Condition

400V, 50A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

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Supplier Device Package

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