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IKW25N120H3FKSA1

IKW25N120H3FKSA1

For Reference Only

Part Number IKW25N120H3FKSA1
PNEDA Part # IKW25N120H3FKSA1
Description IGBT 1200V 50A 326W TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IKW25N120H3FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIKW25N120H3FKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IKW25N120H3FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesTrenchStop®
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 25A
Power - Max326W
Switching Energy2.65mJ
Input TypeStandard
Gate Charge115nC
Td (on/off) @ 25°C27ns/277ns
Test Condition600V, 25A, 23Ohm, 15V
Reverse Recovery Time (trr)290ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 15A

Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

XPT™, GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

410A

Current - Collector Pulsed (Icm)

1100A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 100A

Power - Max

1560W

Switching Energy

5mJ (on), 4mJ (off)

Input Type

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Gate Charge

340nC

Td (on/off) @ 25°C

60ns/370ns

Test Condition

400V, 100A, 0Ohm, 15V

Reverse Recovery Time (trr)

108ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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IRG8P40N120KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

240nC

Td (on/off) @ 25°C

40ns/245ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

80ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

19A

Current - Collector Pulsed (Icm)

38A

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Power - Max

60W

Switching Energy

320µJ (on), 2.58mJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

62ns/690ns

Test Condition

480V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

IRG4BC20KDSTRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

32A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 9A

Power - Max

60W

Switching Energy

340µJ (on), 300µJ (off)

Input Type

Standard

Gate Charge

34nC

Td (on/off) @ 25°C

54ns/180ns

Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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