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IPB023N06N3GATMA1

IPB023N06N3GATMA1

For Reference Only

Part Number IPB023N06N3GATMA1
PNEDA Part # IPB023N06N3GATMA1
Description MOSFET N-CH 60V 140A TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,696
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB023N06N3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB023N06N3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB023N06N3GATMA1, IPB023N06N3GATMA1 Datasheet (Total Pages: 9, Size: 671.04 KB)
PDFIPB023N06N3GATMA1 Datasheet Cover
IPB023N06N3GATMA1 Datasheet Page 2 IPB023N06N3GATMA1 Datasheet Page 3 IPB023N06N3GATMA1 Datasheet Page 4 IPB023N06N3GATMA1 Datasheet Page 5 IPB023N06N3GATMA1 Datasheet Page 6 IPB023N06N3GATMA1 Datasheet Page 7 IPB023N06N3GATMA1 Datasheet Page 8 IPB023N06N3GATMA1 Datasheet Page 9

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IPB023N06N3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 141µA
Gate Charge (Qg) (Max) @ Vgs198nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16000pF @ 30V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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