IPB039N10N3GE8187ATMA1
For Reference Only
| Part Number | IPB039N10N3GE8187ATMA1 |
| PNEDA Part # | IPB039N10N3GE8187ATMA1 |
| Description | MOSFET N-CH 100V 160A TO263-7 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,300 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB039N10N3GE8187ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB039N10N3GE8187ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IPB039N10N3GE8187ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 160µA |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 35V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 17.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V FET Feature - Power Dissipation (Max) 1W (Ta), 15W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TP-FA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
