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IPB230N06L3GATMA1

IPB230N06L3GATMA1

For Reference Only

Part Number IPB230N06L3GATMA1
PNEDA Part # IPB230N06L3GATMA1
Description MOSFET N-CH 60V 30A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,112
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB230N06L3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB230N06L3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB230N06L3GATMA1, IPB230N06L3GATMA1 Datasheet (Total Pages: 10, Size: 400.26 KB)
PDFIPB230N06L3GATMA1 Datasheet Cover
IPB230N06L3GATMA1 Datasheet Page 2 IPB230N06L3GATMA1 Datasheet Page 3 IPB230N06L3GATMA1 Datasheet Page 4 IPB230N06L3GATMA1 Datasheet Page 5 IPB230N06L3GATMA1 Datasheet Page 6 IPB230N06L3GATMA1 Datasheet Page 7 IPB230N06L3GATMA1 Datasheet Page 8 IPB230N06L3GATMA1 Datasheet Page 9 IPB230N06L3GATMA1 Datasheet Page 10

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IPB230N06L3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 30V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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