IPB80N08S2L07ATMA1
For Reference Only
Part Number | IPB80N08S2L07ATMA1 |
PNEDA Part # | IPB80N08S2L07ATMA1 |
Description | MOSFET N-CH 75V 80A TO263-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 22,716 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 3 - Nov 8 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB80N08S2L07ATMA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IPB80N08S2L07ATMA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB80N08S2L07ATMA1 Specifications
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.8mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 233nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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