IPC80N04S403ATMA1
For Reference Only
| Part Number | IPC80N04S403ATMA1 |
| PNEDA Part # | IPC80N04S403ATMA1 |
| Description | MOSFET N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,430 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 3 - Jun 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPC80N04S403ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPC80N04S403ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IPC80N04S403ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5720pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-23 |
| Package / Case | 8-PowerVDFN |
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Manufacturer Central Semiconductor Corp Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4.5V Vgs (Max) 8V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 16V FET Feature - Power Dissipation (Max) 300mW (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-523 Package / Case SOT-523 |
