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IPD038N04NGBTMA1

IPD038N04NGBTMA1

For Reference Only

Part Number IPD038N04NGBTMA1
PNEDA Part # IPD038N04NGBTMA1
Description MOSFET N-CH 40V 90A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD038N04NGBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD038N04NGBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD038N04NGBTMA1, IPD038N04NGBTMA1 Datasheet (Total Pages: 9, Size: 423.21 KB)
PDFIPD038N04NGBTMA1 Datasheet Cover
IPD038N04NGBTMA1 Datasheet Page 2 IPD038N04NGBTMA1 Datasheet Page 3 IPD038N04NGBTMA1 Datasheet Page 4 IPD038N04NGBTMA1 Datasheet Page 5 IPD038N04NGBTMA1 Datasheet Page 6 IPD038N04NGBTMA1 Datasheet Page 7 IPD038N04NGBTMA1 Datasheet Page 8 IPD038N04NGBTMA1 Datasheet Page 9

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IPD038N04NGBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 45µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 20V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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