Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD50N10S3L16ATMA1

IPD50N10S3L16ATMA1

For Reference Only

Part Number IPD50N10S3L16ATMA1
PNEDA Part # IPD50N10S3L16ATMA1
Description MOSFET N-CH 100V 50A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 21,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD50N10S3L16ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD50N10S3L16ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD50N10S3L16ATMA1 Datasheet
  • where to find IPD50N10S3L16ATMA1
  • Infineon Technologies

  • Infineon Technologies IPD50N10S3L16ATMA1
  • IPD50N10S3L16ATMA1 PDF Datasheet
  • IPD50N10S3L16ATMA1 Stock

  • IPD50N10S3L16ATMA1 Pinout
  • Datasheet IPD50N10S3L16ATMA1
  • IPD50N10S3L16ATMA1 Supplier

  • Infineon Technologies Distributor
  • IPD50N10S3L16ATMA1 Price
  • IPD50N10S3L16ATMA1 Distributor

IPD50N10S3L16ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4180pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPA60R360P7SE8228XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

555pF @ 400V

FET Feature

-

Power Dissipation (Max)

22W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

SPP80N03S2L-03

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8180pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

TK12A80W,S4X

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

4V @ 570µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 300V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

AOT440

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SDMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

15.5A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5600pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRFH8334TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1180pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-PowerTDFN

Recently Sold

MAX3232CSE+T

MAX3232CSE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

MSP5.0A-M3/89A

MSP5.0A-M3/89A

Vishay Semiconductor Diodes Division

TVS DIODE 5V 10.9V MICROSMP

MAX3280EAUK+T

MAX3280EAUK+T

Maxim Integrated

IC RECEIVER 0/1 SOT23-5

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA

M25P64-VMF6P

M25P64-VMF6P

Micron Technology Inc.

IC FLASH 64M SPI 50MHZ 16SO W

MD2369A

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

LTM4644IY

LTM4644IY

Linear Technology/Analog Devices

DC DC CONVERTER 4X0.6-5.5V

MC9S08DN16ACLC

MC9S08DN16ACLC

NXP

IC MCU 8BIT 16KB FLASH 32LQFP

XCZU9EG-1FFVB1156I

XCZU9EG-1FFVB1156I

Xilinx

IC SOC CORTEX-A53 1156FCBGA

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

DLP11TB800UL2L

DLP11TB800UL2L

Murata

CMC 100MA 2LN 80 OHM SMD

1N4007-TP

1N4007-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41