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IPD80R1K4P7ATMA1

IPD80R1K4P7ATMA1

For Reference Only

Part Number IPD80R1K4P7ATMA1
PNEDA Part # IPD80R1K4P7ATMA1
Description MOSFET N-CH 800V 4A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 20,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD80R1K4P7ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD80R1K4P7ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD80R1K4P7ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 500V
FET FeatureSuper Junction
Power Dissipation (Max)32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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