IPG20N04S408AATMA1
For Reference Only
| Part Number | IPG20N04S408AATMA1 |
| PNEDA Part # | IPG20N04S408AATMA1 |
| Description | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,986 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 5 - Jun 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPG20N04S408AATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPG20N04S408AATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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IPG20N04S408AATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2940pF @ 25V |
| Power - Max | 65W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
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Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 7.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V Power - Max 65W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-4 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A Rds On (Max) @ Id, Vgs 5.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 31.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2352pF @ 25V Power - Max 68W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case SOT-1205, 8-LFPAK56 Supplier Device Package LFPAK56D |
Manufacturer Diodes Incorporated Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A Rds On (Max) @ Id, Vgs 150mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 320pF @ 16V Power - Max 600mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Supplier Device Package SOT-26 |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A Rds On (Max) @ Id, Vgs 49mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V Power - Max 330mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package VS-8 (2.9x1.5) |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 2.5W Operating Temperature - Mounting Type Surface Mount Package / Case 6-SMD, No Lead Supplier Device Package 6-CSP (1.77x3.54) |
