Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP70N04S307AKSA1

IPP70N04S307AKSA1

For Reference Only

Part Number IPP70N04S307AKSA1
PNEDA Part # IPP70N04S307AKSA1
Description MOSFET N-CH 40V 80A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP70N04S307AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP70N04S307AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP70N04S307AKSA1, IPP70N04S307AKSA1 Datasheet (Total Pages: 9, Size: 186.13 KB)
PDFIPP70N04S307AKSA1 Datasheet Cover
IPP70N04S307AKSA1 Datasheet Page 2 IPP70N04S307AKSA1 Datasheet Page 3 IPP70N04S307AKSA1 Datasheet Page 4 IPP70N04S307AKSA1 Datasheet Page 5 IPP70N04S307AKSA1 Datasheet Page 6 IPP70N04S307AKSA1 Datasheet Page 7 IPP70N04S307AKSA1 Datasheet Page 8 IPP70N04S307AKSA1 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPP70N04S307AKSA1 Datasheet
  • where to find IPP70N04S307AKSA1
  • Infineon Technologies

  • Infineon Technologies IPP70N04S307AKSA1
  • IPP70N04S307AKSA1 PDF Datasheet
  • IPP70N04S307AKSA1 Stock

  • IPP70N04S307AKSA1 Pinout
  • Datasheet IPP70N04S307AKSA1
  • IPP70N04S307AKSA1 Supplier

  • Infineon Technologies Distributor
  • IPP70N04S307AKSA1 Price
  • IPP70N04S307AKSA1 Distributor

IPP70N04S307AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

The Products You May Be Interested In

NVTFS6H880NWFTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NTTFS4C25NTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5A (Ta), 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 15V

FET Feature

-

Power Dissipation (Max)

690mW (Ta), 20.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

IRF6621TR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.1mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.5nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1460pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ SQ

Package / Case

DirectFET™ Isometric SQ

IPB65R110CFDATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs

118nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3240pF @ 100V

FET Feature

-

Power Dissipation (Max)

277.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

PMV280ENEAR

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

385mOhm @ 1.1A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 50V

FET Feature

-

Power Dissipation (Max)

580mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

ATMEGA2560-16AU

ATMEGA2560-16AU

Microchip Technology

IC MCU 8BIT 256KB FLASH 100TQFP

VN610SP-E

VN610SP-E

STMicroelectronics

RELAY SSR HI-SIDE 1CH POWERSO10

ALDP112W

ALDP112W

Panasonic Electric Works

RELAY GEN PURPOSE SPST 5A 12V

AD9240ASZRL

AD9240ASZRL

Analog Devices

IC ADC 14BIT PIPELINED 44MQFP

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917

EX-11EB

EX-11EB

Panasonic Industrial Automation Sales

SENSOR THROUGH-BEAM 15CM NPN

FDN360P

FDN360P

ON Semiconductor

MOSFET P-CH 30V 2A SSOT3

ES2D

ES2D

ON Semiconductor

DIODE GEN PURP 200V 2A DO214AA

MMBZ5V6ALT1G

MMBZ5V6ALT1G

ON Semiconductor

TVS DIODE 3V 8V SOT23-3

GS-R424

GS-R424

STMicroelectronics

DC DC CONVERTER 24V 4A

766161102GPTR13

766161102GPTR13

CTS Resistor Products

RES ARRAY 15 RES 1K OHM 16SOIC

PMV65XP,215

PMV65XP,215

Nexperia

MOSFET P-CH 20V 2.8A SOT-23