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IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

For Reference Only

Part Number IPP80R1K4P7XKSA1
PNEDA Part # IPP80R1K4P7XKSA1
Description MOSFET N-CH 800V 4A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 22,296
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP80R1K4P7XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP80R1K4P7XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP80R1K4P7XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 500V
FET FeatureSuper Junction
Power Dissipation (Max)32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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