IPZ40N04S58R4ATMA1
For Reference Only
| Part Number | IPZ40N04S58R4ATMA1 |
| PNEDA Part # | IPZ40N04S58R4ATMA1 |
| Description | MOSFET N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,988 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 10 - Jun 15 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPZ40N04S58R4ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPZ40N04S58R4ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPZ40N04S58R4ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 771pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8-32 |
| Package / Case | 8-PowerTDFN |
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 430mOhm @ 6.25A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 25V FET Feature - Power Dissipation (Max) 56W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16.3A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 15V FET Feature - Power Dissipation (Max) 1.47W (Ta), 22.73W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
