Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF3708S

IRF3708S

For Reference Only

Part Number IRF3708S
PNEDA Part # IRF3708S
Description MOSFET N-CH 30V 62A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,556
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3708S Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3708S
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3708S, IRF3708S Datasheet (Total Pages: 11, Size: 142.42 KB)
PDFIRF3708L Datasheet Cover
IRF3708L Datasheet Page 2 IRF3708L Datasheet Page 3 IRF3708L Datasheet Page 4 IRF3708L Datasheet Page 5 IRF3708L Datasheet Page 6 IRF3708L Datasheet Page 7 IRF3708L Datasheet Page 8 IRF3708L Datasheet Page 9 IRF3708L Datasheet Page 10 IRF3708L Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF3708S Datasheet
  • where to find IRF3708S
  • Infineon Technologies

  • Infineon Technologies IRF3708S
  • IRF3708S PDF Datasheet
  • IRF3708S Stock

  • IRF3708S Pinout
  • Datasheet IRF3708S
  • IRF3708S Supplier

  • Infineon Technologies Distributor
  • IRF3708S Price
  • IRF3708S Distributor

IRF3708S Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.8V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2417pF @ 15V
FET Feature-
Power Dissipation (Max)87W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NP48N055KLE-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 85W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB9403L-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

245nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13500pF @ 20V

FET Feature

-

Power Dissipation (Max)

333W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AON6796

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

32A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 15V

FET Feature

-

Power Dissipation (Max)

6.2W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6)

Package / Case

8-PowerSMD, Flat Leads

TK12P60W,RVQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

340mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

3.7V @ 600µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SIHG22N50D-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

230mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1938pF @ 100V

FET Feature

-

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

1206L110THYR

1206L110THYR

Littelfuse

PTC RESET FUSE 8V 1.1A 1206

MMBT3904LT1G

MMBT3904LT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT23

MC34844AEPR2

MC34844AEPR2

NXP

IC LED DRVR RGLTR DIM 80MA 32QFN

VS-72CPQ030PBF

VS-72CPQ030PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO247AC

CY62126EV30LL-45ZSXI

CY62126EV30LL-45ZSXI

Cypress Semiconductor

IC SRAM 1M PARALLEL 44TSOP II

MMA8451QR1

MMA8451QR1

NXP

ACCELEROMETER 2-8G I2C 16QFN

PIC16F1829T-I/SS

PIC16F1829T-I/SS

Microchip Technology

IC MCU 8BIT 14KB FLASH 20SSOP

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

NC7SZ08P5X

NC7SZ08P5X

ON Semiconductor

IC GATE AND 1CH 2-INP SC70-5

PI3VDP411LSRZBE

PI3VDP411LSRZBE

Diodes Incorporated

IC DEMULTIPLEXER 48TQFN

IRGP4750D-EPBF

IRGP4750D-EPBF

Infineon Technologies

IGBT 650V 70A 273W TO247AD

NTJD4152PT1G

NTJD4152PT1G

ON Semiconductor

MOSFET 2P-CH 20V 0.88A SOT-363