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IRF3717TR

IRF3717TR

For Reference Only

Part Number IRF3717TR
PNEDA Part # IRF3717TR
Description MOSFET N-CH 20V 20A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 9 - Jun 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF3717TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF3717TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF3717TR, IRF3717TR Datasheet (Total Pages: 10, Size: 248.87 KB)
PDFIRF3717 Datasheet Cover
IRF3717 Datasheet Page 2 IRF3717 Datasheet Page 3 IRF3717 Datasheet Page 4 IRF3717 Datasheet Page 5 IRF3717 Datasheet Page 6 IRF3717 Datasheet Page 7 IRF3717 Datasheet Page 8 IRF3717 Datasheet Page 9 IRF3717 Datasheet Page 10

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IRF3717TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2890pF @ 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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