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IRF4104L

IRF4104L

For Reference Only

Part Number IRF4104L
PNEDA Part # IRF4104L
Description MOSFET N-CH 40V 75A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF4104L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF4104L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF4104L, IRF4104L Datasheet (Total Pages: 13, Size: 277.22 KB)
PDFIRF4104 Datasheet Cover
IRF4104 Datasheet Page 2 IRF4104 Datasheet Page 3 IRF4104 Datasheet Page 4 IRF4104 Datasheet Page 5 IRF4104 Datasheet Page 6 IRF4104 Datasheet Page 7 IRF4104 Datasheet Page 8 IRF4104 Datasheet Page 9 IRF4104 Datasheet Page 10 IRF4104 Datasheet Page 11

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IRF4104L Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 25V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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