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IRF520NSTRRPBF

IRF520NSTRRPBF

For Reference Only

Part Number IRF520NSTRRPBF
PNEDA Part # IRF520NSTRRPBF
Description MOSFET N-CH 100V 9.7A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF520NSTRRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF520NSTRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF520NSTRRPBF, IRF520NSTRRPBF Datasheet (Total Pages: 11, Size: 408.99 KB)
PDFIRF520NSTRRPBF Datasheet Cover
IRF520NSTRRPBF Datasheet Page 2 IRF520NSTRRPBF Datasheet Page 3 IRF520NSTRRPBF Datasheet Page 4 IRF520NSTRRPBF Datasheet Page 5 IRF520NSTRRPBF Datasheet Page 6 IRF520NSTRRPBF Datasheet Page 7 IRF520NSTRRPBF Datasheet Page 8 IRF520NSTRRPBF Datasheet Page 9 IRF520NSTRRPBF Datasheet Page 10 IRF520NSTRRPBF Datasheet Page 11

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IRF520NSTRRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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