Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF5805

IRF5805

For Reference Only

Part Number IRF5805
PNEDA Part # IRF5805
Description MOSFET P-CH 30V 3.8A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF5805 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF5805
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF5805, IRF5805 Datasheet (Total Pages: 9, Size: 125.89 KB)
PDFIRF5805TR Datasheet Cover
IRF5805TR Datasheet Page 2 IRF5805TR Datasheet Page 3 IRF5805TR Datasheet Page 4 IRF5805TR Datasheet Page 5 IRF5805TR Datasheet Page 6 IRF5805TR Datasheet Page 7 IRF5805TR Datasheet Page 8 IRF5805TR Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF5805 Datasheet
  • where to find IRF5805
  • Infineon Technologies

  • Infineon Technologies IRF5805
  • IRF5805 PDF Datasheet
  • IRF5805 Stock

  • IRF5805 Pinout
  • Datasheet IRF5805
  • IRF5805 Supplier

  • Infineon Technologies Distributor
  • IRF5805 Price
  • IRF5805 Distributor

IRF5805 Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs98mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds511pF @ 25V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

AOB12N50L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

520mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1633pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BSS138K-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

310mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 220mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23.2pF @ 25V

FET Feature

-

Power Dissipation (Max)

380mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6230pF @ 25V

FET Feature

-

Power Dissipation (Max)

234W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPP80N06S2LH5AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5000pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

TSM650P03CX RFG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

65mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

810pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.56W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

SMF05C.TCT

SMF05C.TCT

Semtech

TVS DIODE 5V 12.5V SC70-6

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

BNX022-01L

BNX022-01L

Murata

FILTER LC 1UF SMD

MAX3362EKA#TG16

MAX3362EKA#TG16

Maxim Integrated

IC TRANSCEIVER HALF 1/1 SOT23-8

BM1422AGMV-ZE2

BM1422AGMV-ZE2

Rohm Semiconductor

SENSOR MR I2C MLGA010V020A

LT1965EDD#PBF

LT1965EDD#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.1A 8DFN

S-8261ABMMD-G3MT2U

S-8261ABMMD-G3MT2U

ABLIC

IC BATT PROTECTION

3314J-1-103E

3314J-1-103E

Bourns

TRIMMER 10K OHM 0.25W J LEAD TOP

MM74HC138N

MM74HC138N

ON Semiconductor

IC DECODER 3-8LINE EXP 16-DIP

MT25QU01GBBB8E12-0SIT

MT25QU01GBBB8E12-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 166MHZ TBGA

74HCT14D,653

74HCT14D,653

Nexperia

IC INVERTER SCHMITT 6CH 14SO

BTS4140NHUMA1

BTS4140NHUMA1

Infineon Technologies

IC PWR SWITCH 62V HISID SOT223-4