Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRF640STRRPBF

IRF640STRRPBF

For Reference Only

Part Number IRF640STRRPBF
PNEDA Part # IRF640STRRPBF
Description MOSFET N-CH 200V 18A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,724
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF640STRRPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRF640STRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF640STRRPBF, IRF640STRRPBF Datasheet (Total Pages: 9, Size: 209.19 KB)
PDFIRF640LPBF Datasheet Cover
IRF640LPBF Datasheet Page 2 IRF640LPBF Datasheet Page 3 IRF640LPBF Datasheet Page 4 IRF640LPBF Datasheet Page 5 IRF640LPBF Datasheet Page 6 IRF640LPBF Datasheet Page 7 IRF640LPBF Datasheet Page 8 IRF640LPBF Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRF640STRRPBF Datasheet
  • where to find IRF640STRRPBF
  • Vishay Siliconix

  • Vishay Siliconix IRF640STRRPBF
  • IRF640STRRPBF PDF Datasheet
  • IRF640STRRPBF Stock

  • IRF640STRRPBF Pinout
  • Datasheet IRF640STRRPBF
  • IRF640STRRPBF Supplier

  • Vishay Siliconix Distributor
  • IRF640STRRPBF Price
  • IRF640STRRPBF Distributor

IRF640STRRPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 130W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SFT1443-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

225mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

490pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 19W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK/TP-FA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

TSM130NB06LCR

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2175pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

99A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21.3nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2601pF @ 12V

FET Feature

-

Power Dissipation (Max)

46.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

FQP13N50C_F105

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2055pF @ 25V

FET Feature

-

Power Dissipation (Max)

195W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRF6797MTR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

36A (Ta), 210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5790pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MX

Package / Case

DirectFET™ Isometric MX

Recently Sold

SMBJ36A-13-F

SMBJ36A-13-F

Diodes Incorporated

TVS DIODE 36V 58.1V SMB

FN2070-36-08

FN2070-36-08

Schaffner EMC

LINE FILTER 110/250VAC 36A CHASS

N25Q256A13ESF40G

N25Q256A13ESF40G

Micron Technology Inc.

IC FLASH 256M SPI 108MHZ 16SOP2

AT89C51ED2-SLSUM

AT89C51ED2-SLSUM

Microchip Technology

IC MCU 8BIT 64KB FLASH 44PLCC

ADA4870ARRZ

ADA4870ARRZ

Analog Devices

IC OPAMP CFA 1 CIRCUIT 20PSOP3

AS5047P-ATSM

AS5047P-ATSM

ams

ROTARY ENCODER MAGNETIC PROG

24LC32A-I/ST

24LC32A-I/ST

Microchip Technology

IC EEPROM 32K I2C 400KHZ 8TSSOP

SMCJ24A-13-F

SMCJ24A-13-F

Diodes Incorporated

TVS DIODE 24V 38.9V SMC

SP0503BAHTG

SP0503BAHTG

Littelfuse

TVS DIODE 5.5V 8.5V SOT143-4

BZT52C4V3-7

BZT52C4V3-7

Diodes Incorporated

DIODE ZENER 4.3V 500MW SOD123

MT25QU512ABB8ESF-0SIT

MT25QU512ABB8ESF-0SIT

Micron Technology Inc.

IC FLASH 512M SPI 133MHZ 16SOIC

MIC2026-1YM-TR

MIC2026-1YM-TR

Microchip Technology

IC PW DIST SW DUAL 8SOIC