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IRF7233TR

IRF7233TR

For Reference Only

Part Number IRF7233TR
PNEDA Part # IRF7233TR
Description MOSFET P-CH 12V 9.5A 8-SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,142
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7233TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7233TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF7233TR, IRF7233TR Datasheet (Total Pages: 7, Size: 92.51 KB)
PDFIRF7233TR Datasheet Cover
IRF7233TR Datasheet Page 2 IRF7233TR Datasheet Page 3 IRF7233TR Datasheet Page 4 IRF7233TR Datasheet Page 5 IRF7233TR Datasheet Page 6 IRF7233TR Datasheet Page 7

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IRF7233TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs20mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs74nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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