Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR9310TRPBF

IRFR9310TRPBF

For Reference Only

Part Number IRFR9310TRPBF
PNEDA Part # IRFR9310TRPBF
Description MOSFET P-CH 400V 1.8A DPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,732
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 4 - Jun 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFR9310TRPBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFR9310TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFR9310TRPBF, IRFR9310TRPBF Datasheet (Total Pages: 11, Size: 241.63 KB)
PDFIRFR9310TRRPBF Datasheet Cover
IRFR9310TRRPBF Datasheet Page 2 IRFR9310TRRPBF Datasheet Page 3 IRFR9310TRRPBF Datasheet Page 4 IRFR9310TRRPBF Datasheet Page 5 IRFR9310TRRPBF Datasheet Page 6 IRFR9310TRRPBF Datasheet Page 7 IRFR9310TRRPBF Datasheet Page 8 IRFR9310TRRPBF Datasheet Page 9 IRFR9310TRRPBF Datasheet Page 10 IRFR9310TRRPBF Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFR9310TRPBF Datasheet
  • where to find IRFR9310TRPBF
  • Vishay Siliconix

  • Vishay Siliconix IRFR9310TRPBF
  • IRFR9310TRPBF PDF Datasheet
  • IRFR9310TRPBF Stock

  • IRFR9310TRPBF Pinout
  • Datasheet IRFR9310TRPBF
  • IRFR9310TRPBF Supplier

  • Vishay Siliconix Distributor
  • IRFR9310TRPBF Price
  • IRFR9310TRPBF Distributor

IRFR9310TRPBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IXFT20N80P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

520mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4685pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

2SK2376(Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

45A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3350pF @ 10V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FL

Package / Case

TO-220-3, Short Tab

IPA50R190CE

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

18.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

190mOhm @ 6.2A, 13V

Vgs(th) (Max) @ Id

3.5V @ 510µA

Gate Charge (Qg) (Max) @ Vgs

47.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1137pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

32W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

BSP171PH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

300mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2V @ 460µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

DMN6040SFDEQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

39213150000

39213150000

Littelfuse

FUSE BRD MNT 3.15A 250VAC RADIAL

NFM31KC223R1H3L

NFM31KC223R1H3L

Murata

CAP FEEDTHRU 0.022UF 50V 1206

TL431ACLPG

TL431ACLPG

ON Semiconductor

IC VREF SHUNT ADJ TO92-3

SMAJ6.0A

SMAJ6.0A

Bourns

TVS DIODE 6V 10.3V SMA

ACPL-M43T-500E

ACPL-M43T-500E

Broadcom

OPTOISOLATOR 4KV TRANSISTOR 5-SO

AOD413

AOD413

Alpha & Omega Semiconductor

MOSFET P-CH 40V 24A TO252

SMF6.0A

SMF6.0A

Littelfuse

TVS DIODE 6V 10.3V SOD123F

MTFC8GLWDQ-3M AIT Z TR

MTFC8GLWDQ-3M AIT Z TR

Micron Technology Inc.

IC FLASH 64G MMC 100LBGA

CDSU4148

CDSU4148

Comchip Technology

DIODE GEN PURP 75V 150MA 0603

CKP25202R2M-T

CKP25202R2M-T

Taiyo Yuden

FIXED IND 2.2UH 400MA 90 MOHM

DS2438Z+

DS2438Z+

Maxim Integrated

IC MONITOR SMART BATTERY 8-SOIC

74HC273D

74HC273D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC