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IRFZ44E

IRFZ44E

For Reference Only

Part Number IRFZ44E
PNEDA Part # IRFZ44E
Description MOSFET N-CH 60V 48A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,500
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFZ44E Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFZ44E
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFZ44E, IRFZ44E Datasheet (Total Pages: 9, Size: 101.14 KB)
PDFIRFZ44E Datasheet Cover
IRFZ44E Datasheet Page 2 IRFZ44E Datasheet Page 3 IRFZ44E Datasheet Page 4 IRFZ44E Datasheet Page 5 IRFZ44E Datasheet Page 6 IRFZ44E Datasheet Page 7 IRFZ44E Datasheet Page 8 IRFZ44E Datasheet Page 9

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IRFZ44E Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 29A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1360pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Infineon Technologies

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FET Type

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Technology

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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FET Feature

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Power Dissipation (Max)

63W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

TO-220AB Full-Pak

Package / Case

TO-220-3 Full Pack

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