Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFZ48NPBF

IRFZ48NPBF

For Reference Only

Part Number IRFZ48NPBF
PNEDA Part # IRFZ48NPBF
Description MOSFET N-CH 55V 64A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 28,788
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFZ48NPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFZ48NPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFZ48NPBF Datasheet
  • where to find IRFZ48NPBF
  • Infineon Technologies

  • Infineon Technologies IRFZ48NPBF
  • IRFZ48NPBF PDF Datasheet
  • IRFZ48NPBF Stock

  • IRFZ48NPBF Pinout
  • Datasheet IRFZ48NPBF
  • IRFZ48NPBF Supplier

  • Infineon Technologies Distributor
  • IRFZ48NPBF Price
  • IRFZ48NPBF Distributor

IRFZ48NPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 32A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1970pF @ 25V
FET Feature-
Power Dissipation (Max)130W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

DMN6040SFDEQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NVTR4503NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

135pF @ 15V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

IRL3714ZL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.2nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 10V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

DMT6004LPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

22A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

96.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4515pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 105W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

ZVN3306A

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

270mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

35pF @ 18V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Recently Sold

T521X336M050ATE075

T521X336M050ATE075

KEMET

CAP TANTALUM 33UF 50V 2917

MC68711E20CFNE3

MC68711E20CFNE3

NXP

IC MCU 8BIT 20KB OTP 52PLCC

BAT41ZFILM

BAT41ZFILM

STMicroelectronics

DIODE SCHOTTKY 100V 200MA SOD123

EG01CV1

EG01CV1

Sanken

DIODE GEN PURP 1KV 500MA AXIAL

744230900

744230900

Wurth Electronics

CMC 550MA 2LN 90 OHM SMD

SMBJ5373B-TP

SMBJ5373B-TP

Micro Commercial Co

DIODE ZENER 68V 5W DO214AA

DMG4468LFG-7

DMG4468LFG-7

Diodes Incorporated

MOSFET N-CH 30V 7.62A DFN3030-8

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

FP3-R47-R

FP3-R47-R

Eaton - Electronics Division

FIXED IND 470NH 10.9A 3.67 MOHM

BAT54AWT1G

BAT54AWT1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT323

EPM2210F256I5N

EPM2210F256I5N

Intel

IC CPLD 1700MC 7NS 256FBGA

MC9S08LH36CLH

MC9S08LH36CLH

NXP

IC MCU 8BIT 36KB FLASH 64LQFP