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IRG7PH30K10DPBF

IRG7PH30K10DPBF

For Reference Only

Part Number IRG7PH30K10DPBF
PNEDA Part # IRG7PH30K10DPBF
Description IGBT 1200V 30A 180W TO247AC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,772
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG7PH30K10DPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG7PH30K10DPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG7PH30K10DPBF, IRG7PH30K10DPBF Datasheet (Total Pages: 10, Size: 436.8 KB)
PDFIRG7PH30K10DPBF Datasheet Cover
IRG7PH30K10DPBF Datasheet Page 2 IRG7PH30K10DPBF Datasheet Page 3 IRG7PH30K10DPBF Datasheet Page 4 IRG7PH30K10DPBF Datasheet Page 5 IRG7PH30K10DPBF Datasheet Page 6 IRG7PH30K10DPBF Datasheet Page 7 IRG7PH30K10DPBF Datasheet Page 8 IRG7PH30K10DPBF Datasheet Page 9 IRG7PH30K10DPBF Datasheet Page 10

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IRG7PH30K10DPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)27A
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 9A
Power - Max180W
Switching Energy530µJ (on), 380µJ (off)
Input TypeStandard
Gate Charge45nC
Td (on/off) @ 25°C14ns/110ns
Test Condition600V, 9A, 22Ohm, 15V
Reverse Recovery Time (trr)140ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

60W

Switching Energy

450µJ (on), 440µJ (off)

Input Type

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Gate Charge

28nC

Td (on/off) @ 25°C

23ns/93ns

Test Condition

960V, 5A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

45A

Vce(on) (Max) @ Vge, Ic

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Power - Max

187W

Switching Energy

46µJ (on), 90µJ (off)

Input Type

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Gate Charge

40nC

Td (on/off) @ 25°C

7ns/29ns

Test Condition

400V, 11A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Alpha & Omega Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 10A

Power - Max

163W

Switching Energy

260µJ (on), 70µJ (off)

Input Type

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Gate Charge

17.4nC

Td (on/off) @ 25°C

10ns/72ns

Test Condition

400V, 10A, 30Ohm, 15V

Reverse Recovery Time (trr)

105ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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