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IRG8CH15K10D

IRG8CH15K10D

For Reference Only

Part Number IRG8CH15K10D
PNEDA Part # IRG8CH15K10D
Description IGBT 1200V ULTRA FAST DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,730
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG8CH15K10D Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG8CH15K10D
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG8CH15K10D Specifications

ManufacturerInfineon Technologies
Series*
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

IXYS

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 20A

Power - Max

190W

Switching Energy

2.1mJ (off)

Input Type

Standard

Gate Charge

72nC

Td (on/off) @ 25°C

25ns/150ns

Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

104A

Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 42A

Power - Max

500W

Switching Energy

-

Input Type

Standard

Gate Charge

200nC

Td (on/off) @ 25°C

72ns/445ns

Test Condition

1500V, 42A, 20Ohm, 15V

Reverse Recovery Time (trr)

1.7µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

IRG4PH40K

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.4V @ 15V, 15A

Power - Max

160W

Switching Energy

730µJ (on), 1.66mJ (off)

Input Type

Standard

Gate Charge

94nC

Td (on/off) @ 25°C

30ns/200ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

NGTB15N60R2FG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Power - Max

54W

Switching Energy

550µJ (on), 220µJ (off)

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

70ns/190ns

Test Condition

300V, 15A, 30Ohm, 15V

Reverse Recovery Time (trr)

95ns

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220F-3FS

AOKS40B60D1

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

Alpha IGBT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Power - Max

278W

Switching Energy

1.55mJ (on), 300µJ (off)

Input Type

Standard

Gate Charge

45nC

Td (on/off) @ 25°C

29ns/74ns

Test Condition

400V, 40A, 7.5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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