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IRG8P75N65UD1PBF

IRG8P75N65UD1PBF

For Reference Only

Part Number IRG8P75N65UD1PBF
PNEDA Part # IRG8P75N65UD1PBF
Description G8 650V 75A CO-PAK-247
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,732
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG8P75N65UD1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG8P75N65UD1PBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRG8P75N65UD1PBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

88A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 40A

Power - Max

500W

Switching Energy

1.38mJ (on), 906µJ (off)

Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

22ns/163ns

Test Condition

600V, 40A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

TO-247-3

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

5A

Current - Collector Pulsed (Icm)

7.5A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 2.5A

Power - Max

53.6W

Switching Energy

50µJ (on), 40µJ (off)

Input Type

Standard

Gate Charge

17.1nC

Td (on/off) @ 25°C

10ns/128ns

Test Condition

400V, 2.5A, 68Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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IRG4BC40W

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

160W

Switching Energy

110µJ (on), 230µJ (off)

Input Type

Standard

Gate Charge

98nC

Td (on/off) @ 25°C

27ns/100ns

Test Condition

480V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

20A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 5A

Power - Max

140W

Switching Energy

380µJ (off)

Input Type

Standard

Gate Charge

29nC

Td (on/off) @ 25°C

46ns/190ns

Test Condition

850V, 10A, 22Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IXGF20N250

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

2500V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 20A

Power - Max

100W

Switching Energy

-

Input Type

Standard

Gate Charge

53nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

i4-Pac™-5 (3 Leads)

Supplier Device Package

ISOPLUS i4-PAC™

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