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IRGP20B120UD-EP

IRGP20B120UD-EP

For Reference Only

Part Number IRGP20B120UD-EP
PNEDA Part # IRGP20B120UD-EP
Description IGBT 1200V 40A 300W TO247AD
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,102
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGP20B120UD-EP Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGP20B120UD-EP
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGP20B120UD-EP Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)40A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic4.85V @ 15V, 40A
Power - Max300W
Switching Energy850µJ (on), 425µJ (off)
Input TypeStandard
Gate Charge169nC
Td (on/off) @ 25°C-
Test Condition600V, 20A, 5Ohm, 15V
Reverse Recovery Time (trr)300ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

52A

Current - Collector Pulsed (Icm)

113A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 24A

Power - Max

230W

Switching Energy

500µJ (on), 450µJ (off)

Input Type

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Gate Charge

37nC

Td (on/off) @ 25°C

33ns/125ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

33ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

155A

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 75A

Power - Max

536W

Switching Energy

2500µJ (on), 2140µJ (off)

Input Type

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Gate Charge

485nC

Td (on/off) @ 25°C

47ns/385ns

Test Condition

400V, 75A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

Manufacturer

IXYS

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

220A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 36A

Power - Max

300W

Switching Energy

950µJ (on), 840µJ (off)

Input Type

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Gate Charge

113nC

Td (on/off) @ 25°C

40ns/270ns

Test Condition

400V, 36A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

54A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 10A

Power - Max

160W

Switching Energy

240µJ (on), 110µJ (off)

Input Type

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Gate Charge

18nC

Td (on/off) @ 25°C

20ns/77ns

Test Condition

400V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

170ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220

NGTB30N135IHR1WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1350V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

220nC

Td (on/off) @ 25°C

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Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247-3

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