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IRGS6B60KTRLPBF

IRGS6B60KTRLPBF

For Reference Only

Part Number IRGS6B60KTRLPBF
PNEDA Part # IRGS6B60KTRLPBF
Description IGBT 600V 13A 90W D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 5 - Jun 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGS6B60KTRLPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGS6B60KTRLPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGS6B60KTRLPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)13A
Current - Collector Pulsed (Icm)26A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 5A
Power - Max90W
Switching Energy110µJ (on), 135µJ (off)
Input TypeStandard
Gate Charge18.2nC
Td (on/off) @ 25°C25ns/215ns
Test Condition400V, 5A, 100Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

210A

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 50A

Power - Max

625W

Switching Energy

3mJ (on), 1mJ (off)

Input Type

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Gate Charge

142nC

Td (on/off) @ 25°C

28ns/133ns

Test Condition

600V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

195ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Manufacturer

IXYS

Series

GenX4™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

310A

Current - Collector Pulsed (Icm)

860A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 160A

Power - Max

940W

Switching Energy

3.3mJ (on), 1.88mJ (off)

Input Type

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Gate Charge

425nC

Td (on/off) @ 25°C

52ns/220ns

Test Condition

400V, 80A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXXK)

APT30GT60BRG

Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

64A

Current - Collector Pulsed (Icm)

110A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 30A

Power - Max

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Switching Energy

525µJ (on), 600µJ (off)

Input Type

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Gate Charge

145nC

Td (on/off) @ 25°C

12ns/225ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

400W

Switching Energy

4.7mJ (off)

Input Type

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Gate Charge

135nC

Td (on/off) @ 25°C

20ns/350ns

Test Condition

720V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

ISL9V2040P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

430V

Current - Collector (Ic) (Max)

10A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.9V @ 4V, 6A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

12nC

Td (on/off) @ 25°C

-/3.64µs

Test Condition

300V, 1kOhm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-220-3

Supplier Device Package

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