Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLML0030TRPBF

IRLML0030TRPBF

For Reference Only

Part Number IRLML0030TRPBF
PNEDA Part # IRLML0030TRPBF
Description MOSFET N-CH 30V 5.3A SOT-23-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 349,704
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLML0030TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLML0030TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLML0030TRPBF Datasheet
  • where to find IRLML0030TRPBF
  • Infineon Technologies

  • Infineon Technologies IRLML0030TRPBF
  • IRLML0030TRPBF PDF Datasheet
  • IRLML0030TRPBF Stock

  • IRLML0030TRPBF Pinout
  • Datasheet IRLML0030TRPBF
  • IRLML0030TRPBF Supplier

  • Infineon Technologies Distributor
  • IRLML0030TRPBF Price
  • IRLML0030TRPBF Distributor

IRLML0030TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs27mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id2.3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs2.6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds382pF @ 15V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro3™/SOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

IXTQ52N30P

IXYS

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

66mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3490pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

ZVNL120A

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

180mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 5V

Rds On (Max) @ Id, Vgs

10Ohm @ 250mA, 5V

Vgs(th) (Max) @ Id

1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

85pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

UPA2738GR-E1-AT

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-PowerSOIC (0.173", 4.40mm Width)

APT80F60J

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

84A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

55mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

598nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

23994pF @ 25V

FET Feature

-

Power Dissipation (Max)

961W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

NIF9N05CLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

59V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

3V, 10V

Rds On (Max) @ Id, Vgs

125mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

7nC @ 4.5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 35V

FET Feature

-

Power Dissipation (Max)

1.69W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Recently Sold

MAX15027ATB/V+T

MAX15027ATB/V+T

Maxim Integrated

IC REG LINEAR POS ADJ 1A 10TDFN

LTC3642EMS8E-5#PBF

LTC3642EMS8E-5#PBF

Linear Technology/Analog Devices

IC REG BUCK 5V 50MA 8MSOP

MBR130LSFT1G

MBR130LSFT1G

ON Semiconductor

DIODE SCHOTTKY 30V 1A SOD123L

LTST-C190GKT

LTST-C190GKT

Lite-On Inc.

LED GREEN CLEAR CHIP SMD

SSQ 2

SSQ 2

Bel Fuse

FUSE BOARD MNT 2A 125VAC/VDC SMD

ADM2483BRWZ

ADM2483BRWZ

Analog Devices

DGTL ISO RS422/RS485 16SOIC

IRF9310TRPBF

IRF9310TRPBF

Infineon Technologies

MOSFET P-CH 30V 20A 8-SOIC

25AA512T-I/SM

25AA512T-I/SM

Microchip Technology

IC EEPROM 512K SPI 20MHZ 8SOIJ

MT41K128M16JT-125 XIT:K

MT41K128M16JT-125 XIT:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 96FBGA

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

IXFK90N20

IXFK90N20

IXYS

MOSFET N-CH 200V 90A TO-264AA