Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRLS3036TRRPBF

IRLS3036TRRPBF

For Reference Only

Part Number IRLS3036TRRPBF
PNEDA Part # IRLS3036TRRPBF
Description MOSFET N-CH 60V 270A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,040
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLS3036TRRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLS3036TRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLS3036TRRPBF, IRLS3036TRRPBF Datasheet (Total Pages: 10, Size: 355.13 KB)
PDFAUIRLSL3036 Datasheet Cover
AUIRLSL3036 Datasheet Page 2 AUIRLSL3036 Datasheet Page 3 AUIRLSL3036 Datasheet Page 4 AUIRLSL3036 Datasheet Page 5 AUIRLSL3036 Datasheet Page 6 AUIRLSL3036 Datasheet Page 7 AUIRLSL3036 Datasheet Page 8 AUIRLSL3036 Datasheet Page 9 AUIRLSL3036 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRLS3036TRRPBF Datasheet
  • where to find IRLS3036TRRPBF
  • Infineon Technologies

  • Infineon Technologies IRLS3036TRRPBF
  • IRLS3036TRRPBF PDF Datasheet
  • IRLS3036TRRPBF Stock

  • IRLS3036TRRPBF Pinout
  • Datasheet IRLS3036TRRPBF
  • IRLS3036TRRPBF Supplier

  • Infineon Technologies Distributor
  • IRLS3036TRRPBF Price
  • IRLS3036TRRPBF Distributor

IRLS3036TRRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 165A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds11210pF @ 50V
FET Feature-
Power Dissipation (Max)380W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IRFP048NPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

89nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

RSR010N10TL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

520mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

540mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT3

Package / Case

SC-96

SI2304DDS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta), 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

235pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta), 1.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

RDN150N20FU6

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1224pF @ 10V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FN

Package / Case

TO-220-3 Full Pack

STD16NF25

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

235mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

TL431ACLP

TL431ACLP

ON Semiconductor

IC VREF SHUNT ADJ TO92-3

EVQ-P7C01P

EVQ-P7C01P

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.05A 12V

B320A-13-F

B320A-13-F

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMA

1N4148WS-7-F

1N4148WS-7-F

Diodes Incorporated

DIODE GEN PURP 75V 150MA SOD323

MT25QU256ABA8ESF-0SIT

MT25QU256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

954206AGLF

954206AGLF

IDT, Integrated Device Technology

IC TIMING CTRL HUB P4 56-TSSOP

T520V337M2R5ATE025

T520V337M2R5ATE025

KEMET

CAP TANT POLY 330UF 2.5V 2917

BSS84-7-F

BSS84-7-F

Diodes Incorporated

MOSFET P-CH 50V 130MA SOT23-3

CAT24M01WI-GT3

CAT24M01WI-GT3

ON Semiconductor

IC EEPROM 1M I2C 1MHZ 8SOIC

BLM41PG102SN1L

BLM41PG102SN1L

Murata

FERRITE BEAD 1 KOHM 1806 1LN

ADM3202ARUZ-REEL

ADM3202ARUZ-REEL

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

2SC4793(F,M)

2SC4793(F,M)

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS