ISL6612IR
For Reference Only
| Part Number | ISL6612IR |
| PNEDA Part # | ISL6612IR |
| Description | IC MOSFET DRVR SYNC BUCK 10-DFN |
| Manufacturer | Renesas Electronics America Inc. |
| Unit Price | Request a Quote |
| In Stock | 4,590 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 22 - May 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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ISL6612IR Resources
| Brand | Renesas Electronics America Inc. |
| ECAD Module |
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| Mfr. Part Number | ISL6612IR |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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ISL6612IR Specifications
| Manufacturer | Renesas Electronics America Inc. |
| Series | - |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 10.8V ~ 13.2V |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 1.25A, 2A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 36V |
| Rise / Fall Time (Typ) | 26ns, 18ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 10-VFDFN Exposed Pad |
| Supplier Device Package | 10-DFN (3x3) |
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Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.7V Current - Peak Output (Source, Sink) 1.9A, 2.3A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 40ns, 20ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 14-DIP (0.300", 7.62mm) Supplier Device Package 14-DIP |
Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type 3-Phase Number of Drivers 6 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.2V Current - Peak Output (Source, Sink) 250mA, 500mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 80ns, 35ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 28-SOIC (0.295", 7.50mm Width) Supplier Device Package 28-SOIC |
Manufacturer Renesas Electronics America Inc. Series - Driven Configuration Low-Side Channel Type Independent Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 4.5V ~ 16V Logic Voltage - VIL, VIH 1.22V, 2.08V Current - Peak Output (Source, Sink) 6A, 6A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 20ns, 20ns Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package 8-SOIC-EP |
