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IXBL60N360

IXBL60N360

For Reference Only

Part Number IXBL60N360
PNEDA Part # IXBL60N360
Description IGBT 3600V 92A ISOPLUS I5PAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,640
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBL60N360 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBL60N360
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBL60N360, IXBL60N360 Datasheet (Total Pages: 5, Size: 159.36 KB)
PDFIXBL60N360 Datasheet Cover
IXBL60N360 Datasheet Page 2 IXBL60N360 Datasheet Page 3 IXBL60N360 Datasheet Page 4 IXBL60N360 Datasheet Page 5

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IXBL60N360 Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)3600V
Current - Collector (Ic) (Max)92A
Current - Collector Pulsed (Icm)720A
Vce(on) (Max) @ Vge, Ic3.4V @ 15V, 60A
Power - Max417W
Switching Energy-
Input TypeStandard
Gate Charge450nC
Td (on/off) @ 25°C50ns/340ns
Test Condition960V, 60A, 4.7Ohm, 15V
Reverse Recovery Time (trr)1.95µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseISOPLUSi5-Pak™
Supplier Device PackageISOPLUSi5-Pak™

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 25A

Power - Max

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Switching Energy

600µJ (on), 700µJ (off)

Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

29ns/130ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

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Supplier Device Package

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IKW15N120T2FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 15A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

93nC

Td (on/off) @ 25°C

32ns/362ns

Test Condition

600V, 15A, 41.8Ohm, 15V

Reverse Recovery Time (trr)

300ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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IKW50N60TFKSA1

Infineon Technologies

Manufacturer

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Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

333W

Switching Energy

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Input Type

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Gate Charge

310nC

Td (on/off) @ 25°C

26ns/299ns

Test Condition

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Reverse Recovery Time (trr)

143ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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