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IXFB170N30P

IXFB170N30P

For Reference Only

Part Number IXFB170N30P
PNEDA Part # IXFB170N30P
Description MOSFET N-CH TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB170N30P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB170N30P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB170N30P, IXFB170N30P Datasheet (Total Pages: 5, Size: 126.56 KB)
PDFIXFB170N30P Datasheet Cover
IXFB170N30P Datasheet Page 2 IXFB170N30P Datasheet Page 3 IXFB170N30P Datasheet Page 4 IXFB170N30P Datasheet Page 5

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IXFB170N30P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18mOhm @ 85A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs258nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20000pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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