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IXFH14N100Q2

IXFH14N100Q2

For Reference Only

Part Number IXFH14N100Q2
PNEDA Part # IXFH14N100Q2
Description MOSFET N-CH 1000V 14A TO-247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH14N100Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH14N100Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH14N100Q2, IXFH14N100Q2 Datasheet (Total Pages: 4, Size: 141.04 KB)
PDFIXFH14N100Q2 Datasheet Cover
IXFH14N100Q2 Datasheet Page 2 IXFH14N100Q2 Datasheet Page 3 IXFH14N100Q2 Datasheet Page 4

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IXFH14N100Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs950mOhm @ 7A, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs83nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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