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IXFH7N100P

IXFH7N100P

For Reference Only

Part Number IXFH7N100P
PNEDA Part # IXFH7N100P
Description MOSFET N-CH
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,802
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH7N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH7N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXFH7N100P Specifications

ManufacturerIXYS
SeriesHiPerFET™, Polar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.9Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2590pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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