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IXFN180N10

IXFN180N10

For Reference Only

Part Number IXFN180N10
PNEDA Part # IXFN180N10
Description MOSFET N-CH 100V 180A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 13,374
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN180N10 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN180N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN180N10, IXFN180N10 Datasheet (Total Pages: 5, Size: 129.68 KB)
PDFIXFN180N10 Datasheet Cover
IXFN180N10 Datasheet Page 2 IXFN180N10 Datasheet Page 3 IXFN180N10 Datasheet Page 4 IXFN180N10 Datasheet Page 5

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IXFN180N10 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs360nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9100pF @ 25V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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