Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFN30N110P

IXFN30N110P

For Reference Only

Part Number IXFN30N110P
PNEDA Part # IXFN30N110P
Description MOSFET N-CH 1100V 25A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,976
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN30N110P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN30N110P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN30N110P, IXFN30N110P Datasheet (Total Pages: 4, Size: 108.91 KB)
PDFIXFN30N110P Datasheet Cover
IXFN30N110P Datasheet Page 2 IXFN30N110P Datasheet Page 3 IXFN30N110P Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFN30N110P Datasheet
  • where to find IXFN30N110P
  • IXYS

  • IXYS IXFN30N110P
  • IXFN30N110P PDF Datasheet
  • IXFN30N110P Stock

  • IXFN30N110P Pinout
  • Datasheet IXFN30N110P
  • IXFN30N110P Supplier

  • IXYS Distributor
  • IXFN30N110P Price
  • IXFN30N110P Distributor

IXFN30N110P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1100V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 15A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs235nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13600pF @ 25V
FET Feature-
Power Dissipation (Max)695W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

The Products You May Be Interested In

FDMS86310

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6290pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

PMN52XPX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

62mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

763pF @ 10V

FET Feature

-

Power Dissipation (Max)

530mW (Ta), 4.46W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457

FDPF14N30

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

SI4418DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

130mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

AON7450

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SDMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5.6A (Ta), 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

48mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id

4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1090pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (3x3)

Package / Case

8-PowerVDFN

Recently Sold

MAX3218EAP+

MAX3218EAP+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

MMBT3904LT1G

MMBT3904LT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT23

MC34844AEPR2

MC34844AEPR2

NXP

IC LED DRVR RGLTR DIM 80MA 32QFN

MCP6042-I/SN

MCP6042-I/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

A700X157M010ATE015

A700X157M010ATE015

KEMET

CAP ALUM POLY 150UF 20% 10V SMD

LT1963AEST-1.8#PBF

LT1963AEST-1.8#PBF

Linear Technology/Analog Devices

IC REG LINEAR 1.8V 1.5A SOT223-3

CP2105-F01-GM

CP2105-F01-GM

Silicon Labs

IC SGL USB-DL UART BRIDGE 24QFN

PCF8593P,112

PCF8593P,112

NXP

IC RTC CLK/CALENDAR I2C 8-DIP

DLP11SN900HL2L

DLP11SN900HL2L

Murata

CMC 150MA 2LN 90 OHM SMD

ATTINY841-SSU

ATTINY841-SSU

Microchip Technology

IC MCU 8BIT 8KB FLASH 14SOIC

SI8540-B-FWR

SI8540-B-FWR

Silicon Labs

IC CURR SENSE 1 CIRCUIT SOT23-5