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IXFN55N50F

IXFN55N50F

For Reference Only

Part Number IXFN55N50F
PNEDA Part # IXFN55N50F
Description MOSFET N-CH 500V 55A SOT227B
Manufacturer IXYS-RF
Unit Price
1 ---------- $455.4301
50 ---------- $434.0819
100 ---------- $412.7336
200 ---------- $391.3853
400 ---------- $373.5950
500 ---------- $355.8048
In Stock 223
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN55N50F Resources

Brand IXYS-RF
ECAD Module ECAD
Mfr. Part NumberIXFN55N50F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN55N50F, IXFN55N50F Datasheet (Total Pages: 2, Size: 106.38 KB)
PDFIXFN55N50F Datasheet Cover
IXFN55N50F Datasheet Page 2

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IXFN55N50F Specifications

ManufacturerIXYS-RF
SeriesHiPerRF™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6700pF @ 25V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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