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IXGM40N60AL

IXGM40N60AL

For Reference Only

Part Number IXGM40N60AL
PNEDA Part # IXGM40N60AL
Description POWER MOSFET TO-3
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGM40N60AL Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGM40N60AL
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Notes

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IXGM40N60AL Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Power - Max

200W

Switching Energy

380µJ (off)

Input Type

Standard

Gate Charge

138nC

Td (on/off) @ 25°C

18ns/115ns

Test Condition

480V, 40A, 2Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

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Manufacturer

IXYS

Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Power - Max

220W

Switching Energy

270µJ (on), 90µJ (off)

Input Type

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Gate Charge

38nC

Td (on/off) @ 25°C

16ns/42ns

Test Condition

300V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

7V @ 2.5V, 100A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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IXYS

Manufacturer

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Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1600V

Current - Collector (Ic) (Max)

5.7A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

7.2V @ 15V, 3A

Power - Max

68W

Switching Energy

-

Input Type

Standard

Gate Charge

26nC

Td (on/off) @ 25°C

-

Test Condition

960V, 3A, 47Ohm, 10V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXBH)

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